parameter symbol typ unit repetitive peak off-state voltages v drm v rrm 500 v average on-state current i t(av) 2.5 a rms on-state current i t(rms) 4.0 a non-repetitive peak on-state current i tsm 35 a max. operating junction temperature t j 110 o c storage temperature t stg -45~150 o c bt148 - 500r general description parameter symbol test conditions min typ max unit repetitive peak off-state voltages v drm v rrm 500 v average on-state current i t(av) half sine wave; t mb < 103 o c 2.5 a rms on-state current i t(rms) all conduction angles 4 a on-state voltage v t i t =5.0a 1.23 1.8 v holding current i h v d =12 v; i gt = 0.1 a 0.1 6 ma latching current i l v d =12 v; i gt = 0.1 a 0.17 10 ma gate trigger current i gt v d =12 v; i t = 0.1 a 15 200 ua gate trigger voltage v gt v d =12 v; i t = 0.1 a 0.4 1.5 v thyristors logic level glass passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. typical applications include motor control, industrial and domestic lighting, product specification sot82 absolute maximum ratings electrical characteristics ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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